基本信息
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Bio
Michael D. Lange was born in Houston, TX, in 1961. He received the Ph.D. degree in physics (major in solid-state physics) from The University of Illinois at Chicago, in 1993.
While with The University of Illinois at Chicago, his research concerned growth by molecular-beam epitaxy (MBE) of certain compound semiconductor materials. Since commencing his university MBE research in 1986, he has been continuously involved in the field of compound-semiconductor MBE. He is currently a Staff Engineer with Space Technology, Northrop Grumman Corporation, Redondo Beach, CA, where he conducts the MBE portion of development projects on various III–V compound semiconductor materials structures for millimeter-wave transistors. His research focuses chiefly on HEMTs designed with indium arsenide in the channel, pseudomorphically strained either to aluminum gallium antimonide or indium phosphide, and including certain other nearly lattice-matched compound semiconductor materials.
Research Interests
Papers共 45 篇Author StatisticsCo-AuthorSimilar Experts
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mag(2013)
Cited23Views0Bibtex
23
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R Tsai,R Grundbacher,M D Lange,J B Boos,B R Bennett,P Nam,L J Lee,M Barsky,C Namba, K Padmanabhan,Stephen Sarkozy,P H Liu,
mag(2013)
Cited23Views0Bibtex
23
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Author Statistics
#Papers: 45
#Citation: 1450
H-Index: 15
G-Index: 38
Sociability: 6
Diversity: 2
Activity: 0
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