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Bio
Dr. Pfeiffer directs the High Electron Mobility Molecular Beam Epitaxy Research Group in the Electrical Engineering Department of Princeton University. He is an expert in the material synthesis technique, Molecular Beam Epitaxy, especially as it applies to the synthesis of the electronic material, gallium-aluminum arsenide. High mobility systems of electrons in gallium arsenide confined to two or fewer-dimensions within epitaxial barriers of aluminum-gallium arsenide have become one of the workhorses of modern semiconductor physics research. His Group at Princeton University concentrates on the Molecular Beam Epitaxial growth of this material at the very highest level of crystal perfection, and studies its novel properties.
The electronic interface between the semiconductor gallium arsenide and the near-insulator aluminum-gallium arsenide is among the most perfect in all of nature, allowing the fabrication of structures in which the electronic carriers are confined by aluminum-gallium arsenide insulating barriers to quantum-sized regions of conducting gallium arsenide that lie deep within the interior of a near-perfect aluminum-gallium arsenide single crystal. His team produces the world's highest-quality material of this kind, and collaborates with many of the leading research labs around the world to investigate the new physics that can be discovered when systems of electrons, or holes, or both, are confined to two or fewer dimensions.
In 2011 he was elected to the U.S. National Academy of Sciences.
In 2004 he was awarded the James C. McGroddy International Prize for New Materials by the American Physical Society with the citation: "In recognition of his outstanding innovations in molecular beam epitaxy technology and semiconductor materials design that have changed our understanding of the physics of lower dimensional electron systems."
In 1993 Dr. Pfeiffer was named Fellow of the American Physical Society.
The electronic interface between the semiconductor gallium arsenide and the near-insulator aluminum-gallium arsenide is among the most perfect in all of nature, allowing the fabrication of structures in which the electronic carriers are confined by aluminum-gallium arsenide insulating barriers to quantum-sized regions of conducting gallium arsenide that lie deep within the interior of a near-perfect aluminum-gallium arsenide single crystal. His team produces the world's highest-quality material of this kind, and collaborates with many of the leading research labs around the world to investigate the new physics that can be discovered when systems of electrons, or holes, or both, are confined to two or fewer dimensions.
In 2011 he was elected to the U.S. National Academy of Sciences.
In 2004 he was awarded the James C. McGroddy International Prize for New Materials by the American Physical Society with the citation: "In recognition of his outstanding innovations in molecular beam epitaxy technology and semiconductor materials design that have changed our understanding of the physics of lower dimensional electron systems."
In 1993 Dr. Pfeiffer was named Fellow of the American Physical Society.
Research Interests
Papers共 210 篇Author StatisticsCo-AuthorSimilar Experts
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PHYSICAL REVIEW Bno. 3 (2024)
Science advancesno. 18 (2024): eadk6960-eadk6960
Anna Grudinina,Maria Efthymiou-Tsironi,Vincenzo Ardizzone,Fabrizio Riminucci,Milena De Giorgi, Dimitris Trypogeorgos,Kirk Baldwin,Loren Pfeiffer,Dario Ballarini,Daniele Sanvitto,Nina Voronova
Nature Communicationsno. 1 (2023): 1-9
Nanomaterials (Basel, Switzerland)no. 10 (2023): 1622-1622
2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)pp.1-2, (2023)
Physical Review Bno. 24 (2022)
2021 IEEE Photonics Conference (IPC)pp.1-2, (2021)
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