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Research Interests

Papers共 190 篇Author StatisticsCo-AuthorSimilar Experts

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Demonstration of Ferroelectric FET Memory with Oxide Semiconductor Channel to Achieve Smallest Cell Area 0.009 Μm2 and High Endurance for Non-Volatile High-Bandwidth Memory Applications
Chun-Chieh Lu, Yu-Chuan Shih,Chih-Yu Chang, Yu-Kai Chang, Yu-Chien Chiu, Wen-Ling Lu,Chih-Hung Nien, Yu-Ming Hsiang, Ya-Yun Cheng, Yi-Ching Liu,Huai-Ying Huang, Pei-Jean Liao, Vincent Duen-Huei Hou,Gerben Doornbos,Georgios Vellianitis,Mark van Dal,Jeff Wu,Yu-Ming Lin
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
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Author Statistics

#Papers: 190

#Citation: 30703

H-Index: 56

G-Index: 167

Sociability: 8

Diversity: 3

Activity: 2

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