基本信息
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Bio
Leonid Tsybeskov received the Ph.D. degree in applied physics from Odessa Mechnikov University, USSR, in 1986.
From 1986 to 1993, he was a Staff Scientist with the Laboratory for Non-crystalline Semiconductors, Odessa Mechnikov University. From 1993 to 2001, he was a Postdoctoral Research Fellow and Visiting Research Professor at the University of Rochester, Rochester, NY. In 1999, he received a German Academic Exchange Service (DAAD) Fellowship and was a Visiting Researcher at the Technical University of Munich, Munich, Germany. In 2001, he joined the Faculty of the New Jersey Institute of Technology (NJIT), Newark, where he is presently a Professor of electrical engineering and materials science. At NJIT, his research has centered on Group IV semiconductor nanostructures. He has made seminal contributions to the development of novel fabrication techniques and understanding of the properties of silicon and silicon/germanium nanostructures and is internationally recognized for his expertise in Group IV nanostructure photonics. He has published more than 120 scientific articles in journals and books and has received two U.S. patents.
Prof. Tsybeskov is a Fellow of the American Physical Society.
Research Interests
Papers共 188 篇Author StatisticsCo-AuthorSimilar Experts
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ECS Meeting Abstractsno. 20 (2022): 1105-1105
PHYSICS TODAYno. 10 (2020): 10.0-10
ECS Meeting Abstractsno. 10 (2020): 1196-1196
ECS Transactionsno. 1 (2018): 99-113
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Author Statistics
#Papers: 194
#Citation: 6074
H-Index: 34
G-Index: 73
Sociability: 6
Diversity: 0
Activity: 0
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