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个人简介
Lionel Trojman (Senior Member, IEEE) received the B.S. degree in physics from the Aix-Marseille University, France, in 2002, the M.S. degree in physics applied to micro- and nano-electronics and in electrical engineering in microelectronic and telecommunication from the Ecole Polytechnique Universitaire de Marseille in 2004, Aix-Marseille University, and the Ph.D. degree in electrical engineering from the KU Leuven in partnership with the imec, Belgium, in 2009. Since 2009, he has been works as a full-time Professor with the Electrical and Electronics Engineering Department, USFQ, Ecuador. Since 2019, he has been with ISEP, France, as a Professor. His current research interests include transport for ultra-scaled MOSFET (sub-100nm) with UTEOT high-k dielectrics with conventional and new architectures (FinFET, FDSOI or TFET) for CMOS technologies but also for memory (ReRAM, MTJ) and GaN power electronic devices.
研究兴趣
论文共 117 篇作者统计合作学者相似作者
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2024 IEEE Latin American Electron Devices Conference (LAEDC)pp.1-4, (2024)
PRIMEpp.197-200, (2023)
2023 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE, LAEDCpp.1-4, (2023)
2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS)pp.80-83, (2023)
Solid-State Electronics (2023): 108778-108778
IEEE ACCESS (2023): 144084-144094
2022 IEEE International Workshop on Metrology for Living Environment (MetroLivEn)pp.174-179, (2022)
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作者统计
#Papers: 118
#Citation: 681
H-Index: 15
G-Index: 22
Sociability: 6
Diversity: 2
Activity: 18
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