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Our research targets are understanding and control of growth dynamics and mechanism of semiconductors such as Si, SiC, GaN, AlN, InGaN and AlGaN. We investigate how silicon single crystals for LSIs and solar cells grow through large scale numerical modeling. Growth mechanisms of these materials and graphene/SiC are also studied. The crystal growth dynamics section focuses on both the MACROSCOPIC phenomena using continuum theory and the MICROSCOPIC phenomena using molecular dynamics, ab initio calculations and Monte Carlo simulation. We also perform solid source AlN solution growth and analyse the crystalline quality of the materials.
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Journal of Crystal Growth (2024): 127550
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Sugunraj Sekar, Keerthivasan Thamotharan,Srinivasan Manickam, Bharathwaj Murugesan,Koichi Kakimoto,Ramasamy Perumalsamy
CRYSTAL RESEARCH AND TECHNOLOGYno. 1 (2024)
JOURNAL OF CRYSTAL GROWTH (2024)
JOURNAL OF CRYSTAL GROWTH (2024)
Journal of Crystal Growth (2023): 126981-126981
SSRN Electronic Journal (2023)
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Kei Kamada, Tomida Taketoshi,Isao Takahashi,Vladimir Kochurikhin,Yasuhiro Shoji,Koichi Kakimoto,Akira Yoshikawa
Oxide-based Materials and Devices XIV (2023)
Crystal Research and Technologyno. 4 (2022): 2100219-2100219
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