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Kham M. Niang received the B.Eng. (Hons.) degree in 2003 and the Ph.D. degree in 2007. She is currently a Research Associate with the Electrical Engineering Department, University of Cambridge. Her research area is in the development of functional oxide thin film materials using physical vapor deposition and atomic layer deposition, and the instability mechanisms in thin film transistors for large area electronics and display applications.
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论文共 20 篇作者统计合作学者相似作者
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Alejandro Frechilla,Mari Napari,Nives Strkalj,Eduardo Barriuso,Kham Niang,Markus Hellenbrand,Pavel Strichovanec,Firman Mangasa Simanjuntak, Guillermo Antorrena,Andrew Flewitt,Cesar Magen,German F. de la Fuente,
APPLIED MATERIALS TODAY (2024): 102033
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 1 (2024): 581-587
Salman Alfarisyi, Patryk Golec,Eva Bestelink,Kham M. Niang,Andrew J. Flewitt,S. Ravi P. Silva,Radu A. Sporea
IEEE Transactions on Electron Devicesno. 7 (2023): 3582-3589
ECS Transactionsno. 6 (2022): 13-17
Mari Napari,Tahmida N. Huq, David J. Meeth,Mikko J. Heikkilä,Kham M. Niang,Han Wang,Tomi Iivonen, Haiyan Wang,Markku Leskelä,Mikko Ritala,Andrew J. Flewitt,Robert L. Z. Hoye,
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