基本信息
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Career Trajectory
Bio
Kenneth J. Stein received the B.S. degree in paper science engineering from the State University of New York, College of Environmental Science and Forestry, Syracuse, NY, and the B.S. degree in chemical engineering from Syracuse University, Syracuse, in 1982 and 1983, respectively.
After two years at Fairchild Semiconductor, he joined IBM's Thomas J. Watson Research Center, Yorktown Heights, NY, where he worked in the Advanced Silicon Technology Facility, holding both process development and management positions. Since 1993, he has been working in the Semiconductor Research Development Center, first in MUV Lithography, and for the past eight years, in the Silicon Germanium BiCMOS development team, with responsibilities in the areas of FEOL, BEOL, and passives process integration. He is currently an Advisory Engineer in the Silicon Germanium BiCMOS Department, IBM, East Fishkill, NY. He holds a number of patents in the areas of capacitor and inductor fabrication.
Research Interests
Papers共 77 篇Author StatisticsCo-AuthorSimilar Experts
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ECS Meeting Abstractsno. 32 (2022): 1196-1196
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)pp.1-4, (2021)
Effendi Leobandung, William J Cote,Laertis Economikos, Younghee Kim,Daegyu Park,Theodorus E Standaert,Kenneth J Stein, Y S Suh,Min Yang
mag(2014)
Cited23Views0Bibtex
23
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mag(2013)
Cited23Views0Bibtex
23
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mag(2013)
Cited23Views0Bibtex
23
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Japanese Journal of Applied Physicsno. 4S (2011)
mag(2011)
Cited28Views0Bibtex
28
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