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Bio
Kazuyuki Hirama was born in Saitama, Japan, on January 7, 1982. He received the B.S., M.S., and Ph.D. degrees from Waseda University, Tokyo, Japan, in 2004, 2006, and 2008, respectively.
He has been engaged in the investigation of high-gain and high-power field-effect transistors, RF transistors, transistor fabrication processes, and hydrogen-terminated diamond hole accumulation layers. Since 2009, he has been with the NTT Basic Research Labolatories, Japan, as a Research Associate.
Dr. Hirama is a member of the Japan Society of Applied Physics and the IEEE Electron Devices Society. He received the Young Scientist Award for the Presentation of an Excellent Paper from the Electronic Materials Symposium in 2006 and the Japan Chapter Student Award from the IEEE Electron Devices Society Japan Chapter in 2008.
Research Interests
Papers共 64 篇Author StatisticsCo-AuthorSimilar Experts
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JOURNAL OF APPLIED PHYSICSno. 7 (2024)
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