Kazuaki Ohshima - N##N#aSemiconductor Energy Laboratory Co., Ltd

基本信息

Career Trajectory

Bio

Kazuaki Ohshima received the B.E. degree from the Tokyo University of Science, Tokyo, Japan, in 2004. He joined Semiconductor Energy Laboratory Company, Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.

Research Interests

Papers共 49 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

Hiromi Sawai,Motomu Kurata, Tsutomu Murakawa, Yoshinori Ando, Kunihiro Fukushima, Ryota Eto, Shinya Sasagawa, Kentaro Sugaya,Ryota Hodo,Toshiki Mizuguchi,Yusuke Komura,Hitoshi Kunitake,

Japanese Journal of Applied Physics (2024)

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1-Mbit 3D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Takeya Hirose,Yuki Okamoto,Yusuke Komura,Toshiki Mizuguchi,Toshihiko Saito,Minato Ito,Kiyotaka Kimura,Hiroki Inoue,Tatsuya Onuki,Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa,

IEEE Journal of the Electron Devices Societyno. 99 (2024): 1-1

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Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

Naomi Yazaki,Ryosuke Motoyoshi, Shiyu Numata,Kazuaki Ohshima, Yuji Egi,Fumito Isaka, Toshikazu Ohno,Sachiaki Tezuka,Toshiki Hamada,Kazuma Furutani,Kazuki Tsuda,Takanori Matsuzaki,

IEEE Journal of the Electron Devices Society (2023): 467-472

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Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit

Hiromi Sawai,Motomu Kurata, Tsutomu Murakawa,Yoshinori Ando, Takako Kikuchi, Kunihiro Fukushima, Ryota Eto, Shinya Sasagawa, Kentaro Sugaya,Ryota Hodo, Yuki Okamoto,Toshiki Mizuguchi,

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

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1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS

Y. Okamoto, Y. Komura, T. Mizuguchi, T. Saito, M. Ito, K. Kimura,Tatsuya Onuki,Yoshinori Ando, H. Sawai, T. Murakawa, H. Kunitake,Takanori Matsuzaki,

VLSI Technology and Circuitspp.1-2, (2023)

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Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

Masashi Oota,Toshiki Hamada, Minato Ito,Toshiki Mizuguchi,Hidetomo Kobayashi,Takanori Matsuzaki, Hiromi Sawai,Hitoshi Kunitake,Tatsuya Onuki,Hajime Kimura,Shunpei Yamazaki

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

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1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

Masaya Ito,Munehiro Kozuma,Toshihiko Saito,Haruo Kobayashi,Ryota Hodo, Tsutomu Murakawa,Hitoshi Kunitake, Teruyoshi Aoyama, Shih-Ci Yen,Chuan-Hua Chang,Wen-Hsiang Hsieh,Hiroshi Yoshida,

IDWpp.172-172, (2022)

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A c-axis aligned crystalline IGZO FET and a 0.06-mu m(2) HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time

M. Endo, S. Numata, K. Ohshima, Y. Egi, F. Isaka, T. Ohno, S. Tezuka, T. Hamada, K. Furutani, K. Tsuda, T. Matsuzaki, T. Onuki,

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

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Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm

Akio Suzuki,Yanagisawa Yuichi, Shota Mizukami,Kazuki Tsuda,Minato Ito,Kazuaki Ohshima,Noriko Matsumoto,Yuto Yakubo,Shoki Miyata,Naoki Okuno,Hitoshi Kunitake, Shinya Sasagawa,

ECS Transactionsno. 7 (2020): 13-27

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-Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

Hitoshi Kunitake, Kazuaki Ohshima,Kazuki Tsuda,Noriko Matsumoto, Tatsuki Koshida,Satoru Ohshita, Hiromi Sawai,Yuichi Yanagisawa, Shiori Saga, Ryo Arasawa,Takako Seki, Ryunosuke Honda,

IEEE Journal of the Electron Devices Society (2019): 495-502

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