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个人简介
Katsunori Onishi (S'02–M'03) received the B.E. degree in applied physics from the University of Tokyo, Tokyo, Japan, in 1991, and the M.S. and Ph.D. degrees in electrical engineering from the University of Texas, Austin, in 2000 and 2003, respectively.
At the University of Texas, his research involved process integration, electrical characterization, and reliabiltiy assessment of the high-$k$ gate dielectrics for the CMOS application. From 1991 to 1998, he was with Ayase LSI Research Center, NKK Corporation, Ayase, Japan. He is currently with IBM Microelectronics, Hopewell Junction, NY, where he is engaged in the research and development of the sub-0.1 $\mu$m CMOS technologies.
研究兴趣
论文共 42 篇作者统计合作学者相似作者
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MRS Online Proceedings Libraryno. 1 (2011): 1-6
mag(2010)
引用49浏览0引用
49
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mag(2009)
引用23浏览0引用
23
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Anthony I Chou,Michael P Chudzik,Toshiharu Furukawa,Oleg Gluschenkov, P D Kirsch,B H Lee,Katsunori Onishi,Heemyoung Park, Kristen C Scheer, Akihisa Sekiguchi
mag(2007)
引用32浏览0引用
32
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Tenko Yamashita,P W Fisher,Oleg Gluschenkov,Hideki Kimura,Ravikumar Ramachandran,Anda C Mocuta,Jon Kluth, Takahiro Kawamura,Katsunori Onishi,David M Fried,Shreesh Narasimha, David Nathan Brown,
High k Gate DielectricsSeries in Material Science and Engineering (2003)
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