基本信息
views: 427
![](https://originalfileserver.aminer.cn/sys/aminer/icon/show-trajectory.png)
Bio
Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.
Research Interests
Papers共 848 篇Author StatisticsCo-AuthorSimilar Experts
By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
IEEE Electron Device Lettersno. 99 (2024): 1-1
Kathryn M. Neilson,Sarallah Hamtaei,Koosha Nassiri Nazif,Joshua M. Carr, Sepideh Rahimisheikh,Frederick U. Nitta,Guy Brammertz, Jeffrey L. Blackburn,Joke Hadermann,Krishna C. Saraswat,Obadiah G. Reid,Bart Vermang,
arxiv(2024)
Cited0Views0Bibtex
0
0
Nature communicationsno. 1 (2023): 1-8
IEEE 53RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ESSDERC 2023pp.1-4, (2023)
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)pp.1-4, (2023)
2023 Device Research Conference (DRC)pp.1-2, (2023)
2023 Middle East and North Africa Solar Conference (MENA-SC)pp.1-3, (2023)
Load More
Author Statistics
#Papers: 857
#Citation: 38848
H-Index: 96
G-Index: 168
Sociability: 7
Diversity: 2
Activity: 1
Co-Author
Co-Institution
D-Core
- 合作者
- 学生
- 导师
Data Disclaimer
The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn