基本信息
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Bio
Joseph Versaggi received the B.S. degree in physics from Emory University, Atlanta, GA, USA, and the M.S. degree in electrical engineering from the University of Florida, Gainesville, FL, USA.
He worked on SRAM (BiCMOS and CMOS) and microprocessor technology at Motorola from
$\cdot 65~\mu {\mathrm{ m}}$
thru
$\cdot 13~\mu {\mathrm{ m}}$
, moving to SRAM circuit design and architecture of 8, 16, and 64 Mb SRAM memories. At Alchemy Semiconductor, he worked on the cache design for MIPS chips. At AMD, he worked on low-power x86 L/S, L1 cache, and L1/L2 interface design/architecture. He moved back to technology at 45 nm, focusing on SRAM and efuse up to 3 nm today.
Research Interests
Papers共 9 篇Author StatisticsCo-AuthorSimilar Experts
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Yuncheng Song,Randy Mann,Sheng Xie, Lucile C. Teague Sheridan,Joseph Versaggi,Dapeng Sun,Chong Khiam Oh, Dirk Fimmel,Daniel Marienfeld, Matthias Hoffmann, Wolfgang Finger
R. Ranjan,Tanya Nigam,Y. Liu, A. Gondal,A. Kerber,Mahadeva Iyer Natarajan,B. Parameshwaran,J. Versaggi, E. Ehrichs
Randy W. Mann, Sandeep Puri,Sheng Xie,Daniel Marienfeld,Joseph Versaggi,Bianzhu Fu,Michael Gribelyuk, Ratheesh R. Thankalekshmi,Xiaoqiang Zhang,Hui Zang,Chad E. Weintraub
S. Balasubramanian,V. Joshi,T. Klick,R. Mann,J. Versaggi, A. Gautam,C. Weintraub, G. Kurz, G. Krause,A. Kerber,B. Parameshwaran,T. Nigam
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