基本信息
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个人简介
Jongyeon Kim received the B.S. and M.S. degrees in electrical engineering
from Yonsei University, Seoul, Korea, in 2005 and 2008, respectively. He is currently working toward the Ph.D. degree in
electrical and computer engineering, in Prof. C. H. Kim's group, at the University of Minnesota, Minneapolis, MN,
USA.
In 2008, he began working for the Semiconductor R&D Center, Samsung Electronics, Hwasung, Korea. For three years,
he was engaged in research and development of FG/TANOS/3D nand flash memories, especially focusing on the cell
reliability characterization. He joined the Department of Electrical and Computer Engineering, University of Minnesota,
in 2011. From June 2014 to August 2014, he interned at Globalfoundries, Santa Clara, CA, USA, working on magnetic tunnel
junction (MTJ) modeling and spin transfer torque magnetoresistive random access memory (STT–MRAM) circuit design.
His research interests include device-circuit codesign for spintronic systems and nanoelectronic/spintronic compact
modeling. He is an author or coauthor of over ten journal and conference papers.
Mr. Kim was the recipient of the Samsung Corporation Scholarship in 2007 and the best student presentation at the
2014 Center for Spintronic Materials, Novel Interface and Architectures (C-SPIN) annual review.
研究兴趣
论文共 52 篇作者统计合作学者相似作者
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Korean journal of neurotraumano. 3 (2023): 307-313
Korean journal of neurotraumano. 3 (2023): 324-332
Journal of Korean Neurosurgical Societyno. 4 (2023): 385-396
Korean Journal of Neurotraumano. 3 (2023): 370-375
Journal of cerebrovascular and endovascular neurosurgeryno. 2 (2023): 174-180
Korean Journal of Neurotraumano. 2 (2022): 230-237
Atherosclerosis (2021): e265
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作者统计
#Papers: 52
#Citation: 609
H-Index: 10
G-Index: 24
Sociability: 5
Diversity: 3
Activity: 6
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