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个人简介
Jongeun Koo (Member, IEEE) received the B.S. degree in electrical engineering from Kyungpook National University, Daegu, South Korea, in 2001, and the M.S. and Ph.D. degrees in electrical engineering from the Pohang University of Science and Technology (POSTECH), Pohang, South Korea, in 2003 and 2020, respectively.
He was with the Semiconductor R&D Center and the Memory Division, Samsung Electronics, Hwaseong, South Korea, from 2003 to 2020, where he contributed to the design and verification of DRAM, flash memory, and SRAM products and the design rule evaluation of 14-nm bulk FinFET technology. His research interests include the design and verification methodologies for advanced DRAM, flash memory, and logic technologies.
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论文共 16 篇作者统计合作学者相似作者
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JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCEno. 2 (2020): 195-203
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#Papers: 16
#Citation: 177
H-Index: 7
G-Index: 13
Sociability: 4
Diversity: 1
Activity: 0
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