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个人简介
Noble M. Johnson (SM'92) received the Ph.D. degree from Princeton University, Princeton, NJ, in 1974.
He is currently a Principal Scientist and Manager in the Electronic Materials Laboratory at the Xerox Palo Alto Research Center. From 1974 to 1976 he worked at SRI International (Menlo Park, CA) in the Radiation Physics Group. Since 1976 he has been with the Xerox Palo Alto Research Center. His research interests have included the general areas of electronic materials and device physics and he has been particularly active in the areas of electronic defects in semiconductors (crystalline and amorphous), metal–insulator–semiconductor structures, deep-level transient spectroscopy, the properties of hydrogen in semiconductors, the plasma-assisted synthesis of materials, and the development of group III-nitride materials for optoelectronics.
In 1987 Dr. Johnson received a Distinguished Senior U.S. Scientist Award from the Alexander von Humboldt Foundation. He conducted research and lectured while in residence at the University of Erlangen-Nürnberg in Germany. He is a fellow of the American Physical Society and a member of the Materials Research Society.
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Optics lettersno. 11 (2023): 2781-2784
Conference on Lasers and Electro-Opticspp.1-2, (2022)
2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID)pp.1-2, (2022)
OPTICS EXPRESSno. 21 (2020): 30542-30554
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user-5f163cde4c775ed682f575fe(2018)
R. J. Molanar, P. Maki, R. Aggarwal,Z. L. Liau,E. R. Brown, I. Melngailis W. Gotz,L. T. Romano,N. M. Johnson
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