基本信息
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Bio
Joff Derluyn (M'03) received the M.Sc. and Ph.D. degrees in electrical engineering from the University of Ghent, Ghent, Belgium, in 1998 and 2003, respectively. His Ph.D. dissertation focused on low temperature metal–organic chemical vapor deposition growth of dilute nitrides.
After this, he joined the Interuniversity Microelectronics Center (IMEC) where he became responsible for the device aspects and processing of III–nitride components. His current research interests include the material science and fabrication of novel III–nitride-based devices for electronic and optoelectronic applications.
Research Interests
Papers共 109 篇Author StatisticsCo-AuthorSimilar Experts
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C. Morelle,D. Theron, I. Roch-Jeune,P. Tilmant,E. Okada,F. Vaurette,B. Grimbert,J. Derluyn,S. Degroote, M. Germain,M. Faucher
Springer Handbook of Semiconductor DevicesSpringer Handbookspp.525-578, (2022)
Applied Physics Ano. 11 (2022): 1-10
S Venkatachalam,Kathia Harrouche,François Grandpierron,Stefan Degroote,Marianne Germain,Joff Derluyn, F Medjdoub
HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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S. Besendoerfer,E. Meissner,Alaleh Tajalli,M. Meneghini, J. A. Freitas,J. Derluyn,F. Medjdoub,G. Meneghesso,J. Friedrich,T. Erlbacher
I Abid,R. Kabouche,F. Medjdoub, S. Besendoerfer,E. Meissner,J. Derluyn,S. Degroote,M. Germain, H. Miyake
HAL (Le Centre pour la Communication Scientifique Directe) (2020)
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Author Statistics
#Papers: 108
#Citation: 2723
H-Index: 28
G-Index: 48
Sociability: 6
Diversity: 3
Activity: 24
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