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Fengbin Tian,Xiaoqing Sun, Songwei Li, Shuangshuang Xu,Junshuai Chai,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Jing Zhang,Xiaolei Wang,Wenwu Wang
IEEE Transactions on Electron Devicesno. 2 (2024): 1040-1047
lt;/tex-math> </inline-formula>Zr<inline-formula> <tex-math notation="LaTeX">$_{\text{0.5}}lt;/tex-math> </inline-formula>O<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}lt;/tex-math> </inline-formula>">Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf $_{\text{0.5}}$ Zr $_{\text{0.5}}$ O $_{\text{2}}$
IEEE Transactions on Electron Devicesno. 99 (2024): 1-7
Shujuan Mao,Jianfeng Gao,Weibing Liu, Yanping He, Xu Chen,Gaobo Xu,Jinbiao Liu,Junfeng Li,Jun Luo,Jing Zhang,Yuke Li,Xiangsheng Wang,
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
Min Liao,Junshuai Chai,Jinjuan Xiang,Kai Han, Yanrong Wang,Hao Xu,Xiaolei Wang,Jing Zhang,Wenwu Wang
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 9 (2023): 4940-4944
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IEEE Transactions on Electron Devicesno. 9 (2023): 4641-4646
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IEEE Transactions on Electron Devicesno. 6 (2023): 3043-3050
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2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
2023 IEEE International Memory Workshop (IMW)pp.1-4, (2023)
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