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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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论文共 21 篇作者统计合作学者相似作者

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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate
Wontaeck Jung, Hyunggon Kim, Do-Bin Kim,Tae-Hyun Kim, Nam-Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim,
IEEE International Solid-State Circuits Conferencepp.236-237, (2024)
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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate
Wontaeck Jung, Hyunggon Kim, Do-Bin Kim,Tae-Hyun Kim, Namhee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim,
2024 IEEE International Solid-State Circuits Conference (ISSCC) (2024): 236-237
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A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package
Youngmin Jo,Anil Kavala,Tongsung Kim,Byungkwan Chun,Jung-June Park,Taesung Lee,Jungmin Seo,Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee,Younghoon Son,
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)
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A 512Gb 3b/Cell 7 th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
Ji-Ho Cho, D. Chris Kang, Jongyeol Park,Sang-Wan Nam, Jung-ho Song,Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee,Won-Tae Kim,Jeon Hongsoo,Sung-Hoon Kim,In-Mo Kim,
international solid-state circuits conference (2021): 426-428
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Highly Manufacturable 7th Generation 3D NAND Flash Memory with COP structure and Double Stack Process
Jun Hyoung Kim,Yongsik Yim, Joonsung Lim,Hyun Suk Kim,Eun Suk Cho, Chadong Yeo, Woongseop Lee, Byungkwan You,Byoungil Lee, Minkyu Kang,Woojae Jang,Youngho Kwon,
2021 Symposium on VLSI Technologypp.1-2, (2021)
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