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论文共 219 篇作者统计合作学者相似作者

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High-Current E-Mode InGaN/GaN P-Fet on P-Gan Gate HEMT Platform
Jingjing Yu,Jin Wei,Junjie Yang,Teng Li,Han Yang, Yingming Song,Jiawei Cui, Sihang Liu,Xuelin Yang,Maojun Wang,Bo Shen
IEEE ELECTRON DEVICE LETTERSno. 2 (2025): 139-142
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Demonstration of One Transistor - One Diode (1T1D) P-Gan/algan/gan Memory Cell
Youyi Yin, Teng Li, Junjie Yang, Jingjing Yu, Yunhong Lao, Hao Chang, Jialin Duan,Xiaosen Liu,Maojun Wang, Kechao Tang, Yimao Cai,Bo Shen,Jin Wei
IEEE Electron Device Lettersno. 99 (2025): 1-1
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Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT
Muqin Nuo, Ming Zhong, Zetao Fan, Yunhong Lao,Lifeng Liu,Maojun Wang,Jin Wei
IEEE Transactions on Electron Devicesno. 99 (2025): 1-6
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Design and Development of Polarization-Enhanced E-Mode GaN P-Fet and Complementary Logic (CL) Circuits
Teng Li, Jingjing Yu, Sihang Liu, Yunhong Lao, Jiawei Cui, Hengyuan Qi, Junjie Yang,Han Yang,Xuelin Yang,Maojun Wang,Yamin Zhang,Shiwei Feng,Bo Shen,Meng Zhang,Jin Wei
IEEE Transactions on Electron Devicesno. 99 (2025): 1-6
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Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection
Junjie Yang,Jingjing Yu,Jiawei Cui,Teng Li, Yunhong Lao,Xuelin Yang,Bo Shen,Xiaosen Liu,Yan Wang,Meng Zhang,Maojun Wang,Jin Wei
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.287-290, (2024)
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作者统计

#Papers: 218

#Citation: 3917

H-Index: 34

G-Index: 54

Sociability: 5

Diversity: 3

Activity: 51

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