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个人简介
James R. Shealy received the B.S. degree from North Carolina State University, Raleigh, in 1978, the M.S. degree from Rensselaer Polytechnic Institute, Troy, NY, in 1980, and the Ph.D. degree from Cornell University, Ithaca, NY, in 1983.
In 1978, he joined the technical staff of the General Electric Corporate Research and Development Center, where he developed GaAs epitaxial materials for high-voltage electronics and composite dielectrics for device fabrication by MOCVD. In 1980, he moved to the General Electric Advanced Electronics Laboratory, where he developed the epitaxial materials and a process for the fabrication of AlGaAs light-emitting diodes and AlGaAs quantum well lasers. In 1984, while he was with General Electric, his group at Cornell University developed the first single-quantum well red laser by MOCVD. In 1985, he became a Principal Staff Scientist with General Electric, in recognition of his research contributions. In 1987, he joined the faculty of Cornell University and, in 1998, was promoted as a Full Professor. He is currently a Member of the graduate faculty of the School of Electrical and Computer Engineering, Cornell University. In 2002, he was a Cofounder and Technical Advisor of RF Nitro Communications, which became the Charlotte division of RF Micro-Devices, the only U.S. company that is currently manufacturing GaN-based electronics. He has published more than 100 journal articles. He is the holder of more than 20 patents, roughly half of which involve GaN-based materials and devices. His current research focuses on GaN materials for power microwave electronics and UV light emitters, where both materials synthesis (by MOCVD) and nanoscale device fabrication are carried out.
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论文共 219 篇作者统计合作学者相似作者
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S. Maroldt, C. Haupt,M. van Heijningen, M. Higashiwaki,T. Mimura, T. Matsui,J. R. Shealy,N. G. Weimann, K. Chu,M. Murphy,W. J. Schaff,L. F. Eastman,
semanticscholar(2019)
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Nature Communicationsno. 1 (2015)
Lee Jong-Won, Technion-Israel Institute of Technology,Fekete Dan,Shealy James R.,Ballantyne Joseph M.
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