基本信息
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Career Trajectory
Bio
Joachim Würfl (Member, IEEE) received the Ph.D. degree in electrical engineering from the Technical University of Darmstadt, Darmstadt, Germany, in 1989, where he focused on the technology and design of high temperature and high-power GaAs-based devices.
As a postdoc, he developed micromechanical sensors based on III/V compound semiconductors with the Technical University of Darmstadt. Since 1992, he has been with the Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany, where he has been responsible for clean room technology, process development, and processing of III/V optoelectronic and microwave devices. Additionally, he has been in charge of the design and development of power heterojunction bipolar transistors and power GaN devices. In 2007, he has been appointed the Head of the newly implemented business field GaN electronics. In this function, he is managing several projects on GaN-based L- and X-band power devices and monolithic microwave ICs, high-voltage power devices, and high-frequency robust lownoise amplifiers. He is responsible for the design, technological implementation, characterization, and reliability testing of these devices. He has authored more than 100 scientific papers in related fields.
Research Interests
Papers共 14 篇Author StatisticsCo-AuthorSimilar Experts
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2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMCpp.61-63, (2023)
IEEE Electron Device Lettersno. 3 (2023): 388-391
IEEE Transactions on Electron Devicesno. 12 (2023): 6244-6249
2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)pp.88-89, (2022)
2021 IEEE Asia-Pacific Microwave Conference (APMC)pp.229-231, (2021)
2020 IEEE MTT-S Latin America Microwave Conference (LAMC 2020)pp.1-3, (2021)
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)pp.1-3, (2021)
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