基本信息
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Bio
Jean-Marc Baribeau received the Ph.D. degree in physics from the Université Laval, Quebec City, QC, Canada, in 1985, working on the physics of low-energy electron scattering from single crystal surfaces.
His work has helped to elucidate the origin of intensity fine structures arising from the image potential at the metal-vacuum interface. In 1985, he joined the Institute for Microstructural Sciences of the National Research Council (Canada) to work on the molecular beam epitaxy of Si-Ge alloys. He has made a number of significant contributions to the development of SiGe epitaxy including early reports of the growth of Ge three-dimensional islands on Si, the growth of SiGe-based photodetectors and the observation of luminescence in amorphous Si/Si dioxide multilayers due to quantum confinement, and the development of SiGeC/Si heteroepitaxy. More recently, his research has focused on the characterization of the structural properties of semiconductors thin films and nanostructures. Recent work includes the study of properties of low-temperature vacuum deposited Si, of the evolution of islands in SiGe superlattices, and of the morphology and strain distribution in GaNAs alloys on GaAs. He has published more than 180 scientific papers in journals and books.
Research Interests
Papers共 135 篇Author StatisticsCo-AuthorSimilar Experts
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Journal of Materials Science: Materials in Electronicsno. 13 (2024): 1-18
ECS Meeting Abstractsno. 42 (2016)
ECS Meeting Abstractsno. 12 (2016): 1266-1266
ECS Transactionsno. 34 (2016)
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Author Statistics
#Papers: 138
#Citation: 2970
H-Index: 27
G-Index: 49
Sociability: 6
Diversity: 3
Activity: 7
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