基本信息
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个人简介
Jonghyun Ahn received the B.S. degree in electrical and electronics engineering from Chungnam National University, Daejeon, South Korea, in 2009.
In 2009, he joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where he has been involved in server DRAM, and now engaged in the design of high-bandwidth memory-2 (HBM2), HBM2E, and HBM3. His research interests include low-power DRAM and circuit verification.
研究兴趣
论文共 409 篇作者统计合作学者相似作者
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Ji-Yeon Kim, Sabin Park,Sepil Ahn,Eun Seop Seo, Soyeon Kim,Mark Gregory,Emily Killingbeck,Eun Yoon Cho, Jeong Eon Lee,Jin Seok Ahn,Yeon Hee Park,Woong-Yang Park,
Cancer Researchno. 6_Supplement (2024): 7644-7644
BioChip Journalpp.1-22, (2024)
Brain tumor research and treatmentno. 1 (2024): 23-39
B.J. Solomon,J.S. Ahn,R. Dziadziuszko,F. Barlesi,M. Nishio, D.H. Lee,J-S. Lee,W-Z. Zhong, H. Horinouchi,W. Mao,M.J. Hochmair,F. de Marinis,
Annals of Oncology (2023): S1295-S1296
D. H. Lee,J. S. Ahn,S-H. Lin, M. Ulanska, G. A. Lopez, C-F. Chian,L. Cho,Z. Szijgyarto,N. Stjepanovic,S. M. Lim
ANNALS OF ONCOLOGY (2023): S1662-S1663
Radiotherapy and Oncology (2023): S1962-S1962
J. H. Cho, S. H. Lim,H. J. An,K. H. Kim,K. U. Park,E. J. Kang,Y. H. Choi,M. S. Ahn,J. -M. Sun, S. -H. Lee,J. S. Ahn, K. Park,
JOURNAL OF THORACIC ONCOLOGYno. 11 (2023): S145-S145
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作者统计
#Papers: 420
#Citation: 5852
H-Index: 33
G-Index: 73
Sociability: 8
Diversity: 3
Activity: 23
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