基本信息
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Bio
Julien Braut received the M. Sc. degree in physics from Lyon University, Lyon, France, in 1997, and the Ph.D. degree in material science from the Ecole Centrale de Lyon, Lyon, France, in 2000. During this time, he was involved with molecular beam epitaxy of III–V compounds for telecom applications.
In 2000, he joined, the Material Science Research Department (DRFMC), Commissariat a l'Energie Atomique (CEA), Grenoble, France, as a Post-Doctoral student, where he was involved with the elaboration and characterization of III–$N$ semiconductors for UV applications. In November 2002, he became a Post-Doctoral Fellow of the Japanese Society for the Promotion of Science, University of Tokyo, Tokyo, Japan, for two years. His research interests included the fabrication and physics of Si NCs-based MOSFET for memory applications. He is currently a Researcher with the Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA) (a Centre National de la Recherche Scientifique (CNRS) laboratory), Valbonne, France, where he is involved with the fabrication of nitride-based heterostructures.
Research Interests
Papers共 186 篇Author StatisticsCo-AuthorSimilar Experts
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Alexandra Ibanez,Mathieu Leroux, Nikita Nikitskiy,Wilfried Desrat,Matthieu Moret,Pierre Valvin,Guillaume Cassabois,Julien Brault,Bernard Gil, Fumiya Chugenji, Kirihara Taiga, Muhamad Ajmal Khan,
Physica status solidi B, Basic research (2024)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEno. 16 (2023)
Journal of Applied Physicsno. 3 (2023)
Nanomaterials (Basel, Switzerland)no. 17 (2023): 2404-2404
Journal of Applied Physicsno. 3 (2023)
Alexandra Ibanez, Nikita Nikitskiy,Aly Zaiter,Pierre Valvin,Wilfried Desrat,Thomas Cohen,M. Ajmal Khan,Guillaume Cassabois,Hideki Hirayama,Patrice Genevet,Julien Brault,Bernard Gil
JOURNAL OF APPLIED PHYSICSno. 19 (2023)
ACS APPLIED NANO MATERIALSno. 10 (2023): 8461-8467
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Author Statistics
#Papers: 186
#Citation: 3230
H-Index: 31
G-Index: 50
Sociability: 6
Diversity: 3
Activity: 16
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