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Bio
Ivan V. Egorov was born in Saratov, Russia, in 1983. He received the B.S. and M.S. degrees in physical engineering from the Department of Physical and Quantum Electronics, Moscow Institute of Physics and Technology (MIPT), in 2006.
He has been a Research Engineer with the Center for Molecular Electronics, MIPT, since 2004. He has authored eight articles. His research interests include seismic sensors development, the influence of electrochemical cell parameters on noise, and the nonlinear characteristics of electrochemical cell at extreme external parameters such as input signal and temperature.
Research Interests
Papers共 21 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE SENSORS LETTERSno. 3 (2024): 1-4
crossref(2024)
2023 7th International Conference on Information, Control, and Communication Technologies (ICCT)pp.1-5, (2023)
Frontiers in Robotics and ElectromechanicsSmart Innovation, Systems and Technologiespp.343-358, (2023)
Sensorsno. 9 (2023): 4311-4311
SSRN Electronic Journal (2022)
Vadim Potylitsyn,Danil Kudinov,Alekseev Dmitry,Ekaterina Kokhonkova, Sergey Kurkov,Ivan Egorov, Aleksandra Pliss
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