基本信息
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Bio
Hyodong Ban received the B.S. degree in material engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 1991, and the M.S. degree in metallic engineering from Seoul National University, Seoul, South Korea, in 1993.
He joined the Semiconductor Research Institute in 1993, where he has developed the process integration of dynamic random access memory (DRAM) from 260 nm of DRAM to 12 nm of DRAM.
Research Interests
Papers共 8 篇Author StatisticsCo-AuthorSimilar Experts
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Soojung Hwang, Jongkyu Kim, Juntae Kim, Dahyun Cha, Minho Kim, Dongkyu Jang, Sunghak Cho,Seokhyang Kim, Jaeseong Park, Hyungjoon Kim, Sukwon Yu, Boyoung Song,
IEEE International Reliability Physics Symposiumpp.1-4, (2024)
Sung-Yong Cho,Moon-Chul Choi,Jaehyeok Baek,Donggun An,Sanghoon Kim,Daewoong Lee, Seongyeal Yang,Gil-Young Kang, Juseop Park,Kyungho Lee,Hwan-Chul Jung, Gunhee Cho,
2024 IEEE International Solid-State Circuits Conference (ISSCC) (2024): 242-244
Dongkyu Jang, Daekyum Kim, Jieun Lee, Inkyum Lee, Sang Bin Ahn, Yoonki Hong,Shindeuk Kim,Taehoon Park,Hyodong Ban
Microelectronics Reliability (2024): 115396
Namyong Kwon,Joonho Bang,Won Ju Sung, Jung Hoon Han,Dongin Lee, Ilwoo Jung, Se Guen Park,Hyodong Ban, Sangjoon Hwang,Won Yong Shin, Jinhye Bae,Dongwoo Lee
Sung-Yong Cho,Moon-Chul Choi,Jaehyeok Baek,Donggun An,Sanghoon Kim,Daewoong Lee, Seongyeal Yang,Gil-Young Kang, Juseop Park,Kyungho Lee,Hwan-Chul Jung, Gun-hee Cho,
IEEE International Solid-State Circuits Conferencepp.242-244, (2024)
IRPSpp.1-5, (2023)
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