基本信息
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Bio
Hye-Ran Kim received the B.S. and M.S. degrees in information and communication engineering and the Ph.D. degree in semiconductor and display engineering from Sungkyunkwan University, Suwon, South Korea, in 2004, 2006, and 2020, respectively.
She joined Samsung Electronics, Hwaseong, South Korea, in 2006, where she has been involved in the design of dynamic random access memory (DRAM), such as GDDR and LPDDR. Her research interests include high-speed interface and clocking circuits and next-generation memory architecture.
Dr. Kim has been serving on the Technical Program Committee for the IEEE International Solid-State Circuits Conference (ISSCC) since 2021.
Research Interests
Papers共 385 篇Author StatisticsCo-AuthorSimilar Experts
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BMC plant biologyno. 1 (2024): 367-367
Sung-Yong Cho,Moon-Chul Choi,Jaehyeok Baek,Donggun An,Sanghoon Kim,Daewoong Lee, Seongyeal Yang,Gil-Young Kang, Juseop Park,Kyungho Lee,Hwan-Chul Jung, Gun-hee Cho,
2024 IEEE International Solid-State Circuits Conference (ISSCC) (2024): 242-244
Journal of acupuncture and meridian studiesno. 2 (2023): 49-55
Plants (Basel, Switzerland)no. 11 (2023): 2175-2175
JOURNAL OF IMMUNOLOGYno. 1 (2023)
Plants (Basel, Switzerland)no. 9 (2023): 1821-1821
Jae-Hyeong Park,Hyeran Kim
International Journal of Molecular Sciencesno. 23 (2023): 16775
MITOCHONDRIAL DNA PART B-RESOURCESno. 11 (2023): 1301-1305
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Author Statistics
#Papers: 393
#Citation: 17903
H-Index: 54
G-Index: 126
Sociability: 8
Diversity: 4
Activity: 71
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