基本信息
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Bio
Hye-Jung Kwon received the B.S. and Ph.D. degrees from the Department of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea, in 2007 and 2014, respectively.
She joined Samsung Electronics Company Ltd., Suwon, South Korea, in 2014, where she has been involved in the design of dynamic random access memory (DRAM), such as GDDR5/6, LPDDR4, and LPDDR5x. She is currently a Visiting Scholar with the Department of Electrical Engineering, Stanford University, Stanford, CA, USA. Her current research interests include high-speed interface circuits, signal integrity (SI)/power integrity, and next-generation memory architecture for compute-in-memory.
Research Interests
Papers共 17 篇Author StatisticsCo-AuthorSimilar Experts
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International Solid-State Circuits Conference (2022): 446-448
Elsevier eBookspp.87-117, (2022)
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.394-394, (2017)
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Author Statistics
#Papers: 17
#Citation: 305
H-Index: 9
G-Index: 14
Sociability: 5
Diversity: 2
Activity: 3
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