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论文共 106 篇作者统计合作学者相似作者

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Trap Thawing-Induced Threshold Voltage Instability in P-Gan HEMTs at Cryogenic Temperatures During Pre-stress
Chuan Song, Wen Yang, Weijian Wang, Jianlang Liao, Peng Wu,Huaxing Jiang, Sheng Jiang,Bin Li
IEEE Electron Device Lettersno. 99 (2025): 1-1
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3D-Simulation Design of a High Current Capacity GaN Tri-Gate Power Device with Integrated Parasitic Bipolar Junction
Chuan Song, Wen Yang,Huaxing Jiang,Bin Li
SEMICONDUCTOR SCIENCE AND TECHNOLOGYno. 1 (2025)
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Bidirectional Threshold Voltage Shift after Positive Bias Temperature Instability of P-Gan HEMTs at Cryogenic Temperature
Chuan Song, Wen Yang, Weijian Wang,Huaxing Jiang, Sheng Jiang,Xiang Yi,Bin Li, Zhao Qi
2025 IEEE International Reliability Physics Symposium (IRPS)pp.1-5, (2025)
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Low Leakage Current Β-Ga2o3 Self-Aligned Trench Junction Barrier Schottky Diodes
Shengliang Cheng, Yuru Lai,Xing Lu, Tiecheng Luo, Haowen Luo, Huichao Hu, Rui Zhou,Huaxing Jiang,Zhisheng Wu,Jun Liang,Zimin Chen,Gang Wang,Yanli Pei
IEEE Transactions on Electron Devicesno. 99 (2025): 1-5
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Investigation of Kink Effect in Quasi-Vertical GaN PiN Diodes on Sapphire
Haowen Luo, Han Lin,Renqiang Zhu,Kei May Lau,Huaxing Jiang
2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA IFWS)pp.241-243, (2024)
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2-Watt 24-34 GHz GaN-on-Si Power Amplifier MMIC with Coupled-resonators-based Interstage Matching Network
Zhihao Xu, Shuixi Chen,Zhijian Chen,Bin Li,Huaxing Jiang
2024 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)pp.1-3, (2024)
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A Novel Split-Gate GaN Reverse Conduction FinFET Device with Lower Dead-Time Power Losses
Peng Wu, Wen Yang, Chuan Song,Huaxing Jiang,Bin Li
2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)pp.1-5, (2024)
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作者统计

#Papers: 106

#Citation: 1818

H-Index: 25

G-Index: 38

Sociability: 5

Diversity: 3

Activity: 45

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