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Bio
Harold S. Gamble graduated from The Queen's University of Belfast with a 1st class honours degree in electrical and electronic engineering in 1966, and received the Ph.D. degree in 1969.
As a research engineer at The Standard Telecommunication Laboratories, Harlow, U.K., he established a polysilicon gate process for MOS integrated circuits. He was appointed to a lectureship at The Queen's University of Belfast, U.K., in 1973, and has lead research there in silicon device design and related technology including, CCDs, silicided shallow junctions, rapid thermal CVD, GTOs and Static Induction Thyristors. In 1992 he was promoted to Professor of Microelectronic Engineering, and until 2010 was the Director of the Northern Ireland Semiconductor Research Centre. Major activity at present is the use of direct silicon wafer bonding for producing silicon-on-insulator (SOI) substrates for low power bipolar transistor circuits. This includes trench and refill before bond technology and buried metallic layers to eliminate epitaxial layers and to minimize collector resistance. Ground plane SOI structures incorporating tungsten silicide layers are being investigated for cross talk suppression in mixed signal circuits and for ultra short MOSTs. The silicon wafer bonding combined with the integrated circuit patterning techniques is also being applied to micro-machining applications such as sensors, mechanical actuators and 3-D mm wave components. His other projects include multilayer free-standing frequency selective surfaces for spatial demultiplexing in the sub-mm wave band, thin film transistors in polysilicon or bonded silicon on glass for displays/imagers, and high density interconnects produced by sputtering and CVD for IC's and MR heads. He has co-authored over 250 publications in the area of silicon devices and thin film technology.
Research Interests
Papers共 94 篇Author StatisticsCo-AuthorSimilar Experts
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Harold Gamble,Paul B. Baine,Yee Low,Paul Rainey, Jenny Montgomery,Michael Bain,B.M. Armstrong,David McNeill,Neil Mitchell
ECS transactions (2019)
Journal of Materials Science: Materials in Electronicsno. 6 (2016): 6292-6304
SEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONSpp.3-29, (2011)
ECS Meeting Abstractsno. 17 (2010): 963-963
Meeting abstracts (2010)
ECS Meeting Abstractsno. 17 (2010): 969-969
ECS Transactionsno. 1 (2010): 201-207
ECS Meeting Abstractsno. 17 (2010): 946-946
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Author Statistics
#Papers: 123
#Citation: 1625
H-Index: 22
G-Index: 37
Sociability: 6
Diversity: 1
Activity: 0
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