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个人简介
Hong-Yu (Henry) Chen (S'10) received the B.S. degree from National Tsing Hua University, Hsinchu, Taiwan, in 2007 and the M.S. degree from Stanford University, Stanford, CA, in 2011, both in electrical engineering. He is currently working toward the Ph.D. degree in the Department of Electrical Engineering and the Center for Integrated Systems, Stanford University, Stanford, CA.
In the summer of 2011, he worked as an Intern in Applied Materials, Sunnyvale, CA, where he worked on high- $k$ metal gate modeling. His research interests include carbon nanotubes, particularly material synthesis, novel transistor device structures, very large scale integration fabrication and processing, and applications in phase change memory.
研究兴趣
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ECS Meeting Abstractsno. 23 (2016): 1182-1182
ECS Transactionsno. 4 (2016): 159-164
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2016)
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2016 IEEE International Electron Devices Meeting (IEDM)pp.21.3.1-21.3.4, (2016)
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user-61447a76e55422cecdaf7d19(2015)
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