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Nick Holonyak
Professor
Holonyak Micro & Nanotechnology Lab
Department of Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois at Urbana-Champaign;Department of Physics, The Grainger College of Engineering, University of Illinois at Urbana-Champaign
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基本信息
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Bio
Professor Nick Holonyak, Jr., has worked at the forefront of semiconductor science and technology since 1952 (45+ years). At Bell Labs, he was an early contributor (1954-55) to diffused-impurity oxide-masked silicon device technology, including transistors, p-n-p-n switches, and thyristors (SCR's) [1]. Later at General Electric (1957-1963), he was the inventor of the shorted emitter used in all thyristors and fundamental to all symmetrical switches (TRIACs), including the basic element in the wall light dimmer. Also he is the first to make silicon tunnel diodes and observe phonon-assisted tunneling [2]. This is the first demonstration of inelastic tunneling and marks the beginning of tunneling spectroscopy (now widely used in many areas of research). In 1960 he invented closed-tube vapor phase epitaxy of III-V semiconductors, which is the forerunner of all present-day III-V epitaxy. He was the first (1960) to grow GaAs1-xPx (an alloy) and in 1962 the first to construct a visible-spectrum semiconductor laser [3]. This is the primary demonstration that III-V alloys are "smooth" (not disturbed) and viable in general for use in optoelectronic devices. For this work he is considered the inventor of the first practical LED, the red GaAs1-xPx LED. This marks also the beginning of the use of III-V alloys in semiconductor devices, including in heterojunctions and quantum well heterostructures.
Research Interests
Papers共 649 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE Conference Proceedings (2019): 1-2
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Author Statistics
#Papers: 649
#Citation: 23557
H-Index: 68
G-Index: 115
Sociability: 6
Diversity: 2
Activity: 0
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