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个人简介
Ho-Young Cha (S'00) was born in Chuncheon, Korea, in 1971. He received the B.S. and M.S. degrees in electrical engineering from Seoul National University (SNU), Seoul, Korea, in 1996 and 1999, respectively, and the Ph.D. degree in electrical and computer engineering from Cornell University, Ithaca, NY, in 2004.
At SNU, his research focused on the development of GaAs PHEMT devices and MMICs. His doctoral research at Cornell focused on the fabrication, simulation, modeling, and design of silicon carbide high-power and high-frequency devices. He was with the Inter-university Semiconductor Research Center (ISRC), Seoul, and the LG Corporate Institute of Technology (LGCIT), Seoul, in 1996 and 1999, respectively. At LGCIT, he was engaged in the development of RF devices and MMICs. Currently, he is a Postdoctoral Research Associate at Cornell University and his research interests are in wide bandgap semiconductor and nanoscale devices. He has authored over 30 publications in his research area.
Dr. Cha received a National Fellowship of Information Technology from Korea for 2000 to 2004.
研究兴趣
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Micro and Nanostructurespp.207802, (2024)
MICRO AND NANOSTRUCTURES (2024)
Materials Science in Semiconductor Processing (2024)
Materials Science in Semiconductor Processing (2024): 108483
Journal of the Korean Institute of Illuminating and Electrical Installation Engineersno. 2 (2024): 133-138
Electronicsno. 1667 (2023): 1667-1667
Sensorsno. 3465 (2023): 3465-3465
Electronicsno. 4347 (2023): 4347-4347
Sung-Hoon Lee,Ho-Young Cha
MICROMACHINESno. 11 (2023): 2005-2005
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