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Bio
Ho-Myoung An was born in Seoul, Korea, in 1977. He received the B.S., M.S., and Ph.D. degrees in electronic material engineering from Kwangwoon University, Seoul, in 2001, 2003, and 2009, respectively.
He is currently a Postdoctoral Fellow in electronic engineering with the Advanced Semiconductor Laboratory, School of Electrical Engineering, Korea University, Seoul. His current research interest includes the characterization of emerging nonvolatile memories, such as charge-trap Flash, ferroelectric RAM, and resistive-switching RAM.
Research Interests
Papers共 73 篇Author StatisticsCo-AuthorSimilar Experts
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Nanomaterials (Basel, Switzerland)no. 12 (2023): 1879-1879
The Journal of Korea Institute of Information, Electronics, and Communication Technologyno. 2 (2017): 141-146
The Journal of Korea Institute of Information, Electronics, and Communication Technologyno. 2 (2017): 192-197
The Journal of Korea Institute of Information, Electronics, and Communication Technologyno. 4 (2016): 414-418
The Journal of Korea Institute of Information, Electronics, and Communication Technologyno. 1 (2015): 37-44
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