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My Research on Diamond Devices:
Due to its extreme properties, diamond is expected to be the ultimate semiconductor device. However, its progress as an active device has been slow because there has been no doping technology developed to realize its high electrical conductance. We focused on surface accumulation layer appearing on a hydrogen terminated diamond surface and developed surface channel field effect transistors (FETs). This type of FET is applicable in high-frequency devices operating at high power, in-plane-gate FETs for nanoelectronics, and biosensors in electrolyte solution.
Due to its extreme properties, diamond is expected to be the ultimate semiconductor device. However, its progress as an active device has been slow because there has been no doping technology developed to realize its high electrical conductance. We focused on surface accumulation layer appearing on a hydrogen terminated diamond surface and developed surface channel field effect transistors (FETs). This type of FET is applicable in high-frequency devices operating at high power, in-plane-gate FETs for nanoelectronics, and biosensors in electrolyte solution.
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Naeemul Islam,Mohamed Fauzi Packeer Mohamed, Firdaus Akbar Jalaludin Khan,Nor Azlin Ghazali,Hiroshi Kawarada,Mohd Syamsul,Alhan Farhanah Abd Rahim,Asrulnizam Abd Manaf
Proceedings of the 12th International Conference on Robotics, Vision, Signal Processing and Power Applications Lecture Notes in Electrical Engineeringpp.133-139, (2024)
2023 IEEE International Symposium On Antennas And Propagation (ISAP)pp.1-2, (2023)
SSRN Electronic Journal (2023): 110013-110013
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Advanced Electronic Materialsno. 3 (2023)
Naeemul Islam,Mohamed Fauzi Packeer Mohamed, Firdaus Akbar Jalaludin Khan,Shaili Falina,Hiroshi Kawarada,Mohd Syamsul,Alhan Farhanah Abd Rahim,Mohd Hendra Hairi, Khaled Ahmeda
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)pp.1-7, (2023)
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2023 International Conference on Electronics Packaging (ICEP)pp.31-32, (2023)
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Key Engineering Materials (2023): 15-20
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M. Hamid, R.I.M. Asri, M. N. M. Nuzaihan,Masafumi Inaba, Z. Hassan,Hiroshi Kawarada,Shaili Falina,Mohd Syamsul
Key Engineering Materials (2023): 3-8
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