基本信息
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Bio
Hiroomi Nakajima was born in Sapporo, Japan, in 1961. He received the B.S. and M.E. degrees in physics from Hokkaido University, Sapporo, in 1984 and 1986, respectively.
In 1986, he joined the Research and Development Center, Toshiba Corporation, Kawasaki, Japan, where he was engaged in the development of BiCMOS technology. He is currently with the Advanced Memory Development Center, Toshiba Corporation Semiconductor Company, Yokkaichi, Japan, working on the development of new nonvolatile memory devices.
Mr. Nakajima is a member of the Japan Society of Applied Physics and the Institute of Electronics, Information, and Communication Engineers.
Research Interests
Papers共 29 篇Author StatisticsCo-AuthorSimilar Experts
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2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGSpp.33-+, (2008)
Washington, DCpp.39-+, (2007)
Cited23Views0Bibtex
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mag(2007)
Cited23Views0Bibtex
23
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mag(2006)
Cited22Views0Bibtex
22
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Author Statistics
#Papers: 25
#Citation: 870
H-Index: 19
G-Index: 19
Sociability: 4
Diversity: 2
Activity: 0
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