基本信息
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Bio
Hidekazu Tsuchida was born in Tokyo, Japan, in 1967. He received the M.S. and Dr. degrees in engineering from Nagaoka University of Technology, Niigata, Japan, in 1992 and 1999, respectively.
In 1992, he joined the Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka, Japan, where he is currently a Senior Research Scientist with the Material Science Research Laboratory. Since 1994, he has been conducting research on SiC crystal growth and power devices. He has been leading the SiC project at CRIEPI. His current interests include SiC CVD growth, defect characterization, and high-voltage devices.
Research Interests
Papers共 266 篇Author StatisticsCo-AuthorSimilar Experts
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024): 108315
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024): 108461
IEEE Transactions on Electron Devicesno. 4 (2023): 1757-1762
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
Takeshi Okamoto,Hideyuki Uehigashi, Tomomasa Kanda, Nobuyuki Ohya, Akiyoshi Horiai, Soma Sakakibara, Takashi Kubo,Kiyoshi Betsuyaku,Norihiro Hoshino,Isaho Kamata,Hidekazu Tsuchida
Solid State Phenomena (2023): 105-112
JOURNAL OF APPLIED PHYSICSno. 15 (2023)
JOURNAL OF APPLIED PHYSICSno. 23 (2023)
APPLIED PHYSICS EXPRESSno. 4 (2022)
The Japan Society of Applied Physics (2021)
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Author Statistics
#Papers: 271
#Citation: 4361
H-Index: 32
G-Index: 51
Sociability: 6
Diversity: 0
Activity: 1
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