基本信息
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Bio
Hidehiro Asai (Member, IEEE) received the B.S., M.S., and Ph.D. degrees in materials engineering from The University of Tokyo, Tokyo, Japan, in 2004, 2006, and 2009, respectively. He is currently a Senior Researcher with the Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan. His research interests include the numerical design of the Si quantum computer hardware and the cryogenic MOSFET.
Research Interests
Papers共 159 篇Author StatisticsCo-AuthorSimilar Experts
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The Journal of The Institute of Electrical Engineers of Japanno. 1 (2025): 38-41
IEEE Journal of the Electron Devices Societyno. 99 (2025): 1-1
SOLID-STATE ELECTRONICS (2025)
Device Research Conferencepp.1-2, (2024)
IEEE Access (2024): 12458-12464
APPLIED PHYSICS EXPRESSno. 7 (2024)
Yusuke Chiashi,Takumi Inaba,Atsushi Yagishita, Makoto Kato, Tomohiro Ishikawa,Oka Hiroshi,Kimihiko Kato,Hidehiro Asai, Minoru Ogura,Shota Iizuka,Takahiro Mori
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)
Japanese Journal of Applied Physics (2024)
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Author Statistics
#Papers: 159
#Citation: 1395
H-Index: 23
G-Index: 30
Sociability: 6
Diversity: 3
Activity: 17
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