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个人简介
Hans Jürgen Mattausch (M'96–SM'00) received the Dipl.Phys. degree from University of Dortmund, Dortmund, Germany, in 1977 and the Dr.rer.nat. degree from University of Stuttgart, Stuttgart, Germany, in 1981.
In 1982, he joined the Research Laboratories, Siemens AG, Munich, Germany, where he was in- volved in the development of MOS technologies as well as the design of memory and telecommunication circuits. In 1990, he led a group conducting research work on the design, modeling, and packaging of MOS technology-based power semiconductor devices. In 1995, he was the Department Manager of the Siemens Semiconductor Group for IC card product analysis and improvement. Since 1996, he has been with Hiroshima University, Hiroshima, Japan, where he is currently a Professor at the Research Center for Nanodevices and Systems. His main present interest is in modeling, design, and architecture issues for effective utilization of nanodevices and nanotechnology.
Dr. Mattausch is a member of the Institute of Electronics, Information and Communication Engineers, Japan.
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论文共 24 篇作者统计合作学者相似作者
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2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)pp.65-68, (2018)
2018 International Symposium on Devices, Circuits and Systems (ISDCS)pp.1-4, (2018)
M. Miura-Mattausch, U. Feldmann, H. Kikuchihara, T. Nakagawa, H. Ichimiya,M. Miyake,T. Iizuka,H. J. Mattausch
NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONALpp.792-795, (2012)
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F. Ueno, A. Tanaka,M. Miyake,T. Iizuka, T. Yamamoto, H. Kikuchihara,H. J. Mattausch,M. Miura-Mattausch
NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONALpp.752-755, (2012)
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NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2pp.706-709, (2011)
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NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2pp.780-783, (2011)
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