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Hans-Joachim L. Gossmann received the Diplom degree from the University of Würzburg, Würzburg, Germany, in 1981, and the M.S. and Ph.D. degrees in physics from the State University of New York (SUNY), Albany, NY, in 1981 and 1984, respectively.
He joined Agere Systems (formerly AT&T Bell Laboratories, Lucent Technologies) in 1984. He is now a Senior Scientist and Advanced Technology Manager at Axcelis Technologies, Beverly, MA. His research interests include Si molecular beam epitaxy and in situ doping, ion solid interactions, the study of native point-defects and their interactions with dopants in Si and III–V materials, predictive physics-based process simulation, the design and manufacture of sub-100-nm Si devices, in particular the formation of contacts and junctions, and III–V-based RF devices. He is the author or coauthor of over 150 technical papers and has more than ten awarded or pending patents.
Dr. Gossmann is a member of the American Physical Society, the American Vacuum Society and the Materials Research Society (MRS). He has served as Subject Editor for the Encyclopedia of Materials: Science and Technology, was an MRS symposium coorganizer in 2000, and a Meeting Chair of the 2003 MRS Spring Meeting.
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论文共 59 篇作者统计合作学者相似作者
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MRS Advancesno. 36 (2022): 1468-1471
H J L Gossmann,Nikolas Zographos, Hugh Park,Benjamin Colombeau, T M Parrill,Niranjan Khasgiwale,Ricardo Garske Borges, Ronald Gull, Synopsys Switzerland Llc Thurgauerstrasse Zuerich
AIP Conference Proceedings (2012): 225-228
C L Yang,C I Li,G P Lin, R Liu,B C Hsu,M Chan,J Y Wu,Benjamin Colombeau,B N Guo,H J Gossmann,Taiyuan Wu, Wushiung Feng,
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