基本信息
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Bio
Hassan Hirshy (M’15) received the Ph.D. degree in electronic engineering from Cardiff University, Cardiff, U.K., in 2008.
He was a Research Associate and the Project Manager with the Manufacturing Engineering Centre, Cardiff University, where he was involved in microfabrication and nanofabrication. He was a Research Fellow with the Centre for High Frequency Engineering, Cardiff University, where he focused on device technology development and circuit design of III–V RF devices. He is currently a Senior RF Engineer with the Compound Semiconductor Applications Catapult, Cardiff, where he is responsible for RF device modeling and PDK development.
Research Interests
Papers共 40 篇Author StatisticsCo-AuthorSimilar Experts
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Applied Physics Lettersno. 16 (2021)
IEEE Transactions on Electron Devicesno. 12 (2018): 5307-5313
Alexander Pooth,Johan Bergsten,Niklas Rorsman,Hassan Hirshy, Richard Marc Perks,Paul J. Tasker,Trevor P. Martin, Richard F. Webster,D Cherns,Michael J. Uren,Martin Kuball
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