基本信息
views: 19
![](https://originalfileserver.aminer.cn/sys/aminer/icon/show-trajectory.png)
Bio
Grace D. Metcalfe received the Ph.D. degree in physics from Yale University, New Haven, CT, USA, in 2005. Her dissertation research included design, development, and characterization of unidirectionally emitting ultraviolet microcavity semiconductor lasers and amplifiers.
Following a two-year appointment as an Oak Ridge Associated Universities Postdoctoral Fellow, she officially joined the Nitride Semiconductor Optoelectronics team at the Army Research Laboratory (ARL), Adelphi, MD, USA, in 2007. She has authored and presented more than 40 papers on terahertz radiation and nitride materials, including a chapter entitled “Terahertz Radiation from Nitride Semiconductors,” in Advanced Series in Applied Physics Volume 6, and holds one patent, with two pending.
Dr. Metcalfe was the recipient of the 2009 Department of the Army Research and Development Achievement Award for her work on terahertz sources with enhanced emission from spontaneously forming nanostructures in nonpolar nitride semiconductors.
Research Interests
Papers共 59 篇Author StatisticsCo-AuthorSimilar Experts
By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Cited23Views0Bibtex
23
0
Rare Earth and Transition Metal Doping of Semiconductor Materialspp.281-312, (2016)
mag(2015)
Load More
Author Statistics
#Papers: 60
#Citation: 1487
H-Index: 23
G-Index: 37
Sociability: 5
Diversity: 3
Activity: 0
Co-Author
Co-Institution
D-Core
- 合作者
- 学生
- 导师
Data Disclaimer
The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn