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During her PhD work, Dr. Dushaq focused on developing a low-temperature technique to grow Germanium directly on Silicon using RF-PECVD. The work included an extensive material characterization and the grown Ge layers are used to fabricate MOSCAPS and photodetectors on CMOS compatible platform. Additionally, Dr. Dushaq has been involved in other research projects included: studying and designing of micro-opto-mechanical structures for inertia sensing, tailoring the optical properties of boron doped μc-Si:H thin films by changing the SiH4/H2 ratio using RF-PECVD process, structural characterization of electric-field assisted dip-coating of gold nanoparticles on silicon, aluminum oxide, and hafnium oxide and electrical and optical characterization of ZnO/Al2O3 alloy growth using atomic layer deposition. Currently, she is a postdoctoral associate at Prof. Mahmoud Rasras research group at New York University, Abu Dhabi. Her current research focuses on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium, III-V and 2D materials for VLSI, high-speed optoelectronics, and nanoelectronics.
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论文共 64 篇作者统计合作学者相似作者
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arxiv(2023)
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Srinvasa Reddy Tamalampudi,Juan Esteban Villegas,Ghada Dushaq,Raman Sankar,Bruna Paredes,Mahmoud Rasras
arXiv (Cornell University) (2023)
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2023 Conference on Lasers and Electro-Optics (CLEO)pp.1-2, (2023)
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Elvira Pantuso, Ejaz Ahmed,Enrica Fontananova,Adele Brunetti,Ibrahim Tahir,Durga Prasad Karothu, Nisreen Amer Alnaji,Ghada Dushaq, Mahmoud Rasras,Panče Naumov,Gianluca Di Profio
2023 Conference on Lasers and Electro-Optics (CLEO)pp.1-2, (2023)
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Advanced Photonics Researchno. 11 (2023): n/a-n/a
Journal of Lightwave Technologyno. 6 (2023): 1784-1789
ECS transactionsno. 3 (2022): 3-7
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