Gerrit Lukens - Department of Compound Semiconductor Technology, RWTH Aachen University

基本信息

Career Trajectory

Bio

Gerrit Lükens received the B.Sc. and M.Sc. (Hons.) degrees in electrical engineering from RWTH Aachen University (RWTH), Aachen, Germany, in 2011 and 2013, respectively, where he is currently pursuing the Ph.D. degree. Since 2014, he has been a Research Assistant with the Compound Semiconductor Technology Group, RWTH. His current research interests include GaN-based transistors and process technology.

Research Interests

Papers共 12 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases

Arno Kirchbrücher,Gerrit Lükens,Carsten Beckmann,Jasmin Ehrler, Qi Shu,Jens Wieben,Thorsten Zweipfennig,Holger Kalisch,Andrei Vescan

IEEE Transactions on Electron Devicesno. 99 (2025): 1-10

Cited0Views0EIWOSBibtex

3D Integrated 300°C Tunable RF Oscillator Exploiting AlGaN/GaN HEMT for High Temperature Applications

P. Palacios,T. Zweipfennig,A. Ottaviani,M. Saeed,C. Beckmann,M. Alomari,G. Lukens,H. Kalisch,J. N. Burghartz,A. Vescan,R. Negra

2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)（2021）

Cited5Views0EIWOSBibtex

Normally-off Transistor Topologies in Gallium Nitride Technology

Gerrit Lükens, Max C. Lemme,Andrei Vescan

openalex（2020）

Cited0Views0Bibtex

Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN MISHEMTs Grown by MOCVD on Silicon Substrate

Lars Heuken,Alessandro Ottaviani,Dirk Fahle,Thorsten Zweipfennig,Gerrit Lükens,Holger Kalisch,Andrei Vescan,Michael Heuken,Joachim N. Burghartz

semanticscholar（2019）

Cited1Views0Bibtex

Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate

Lars Heuken,Alessandro Ottaviani,Dirk Fahle,Thorsten Zweipfennig,Gerrit Luekens,Holger Kalisch,Andrei Vescan,Michael Heuken,Joachim N. Burghartz

physica status solidi (a)（2019）

Cited1Views0Bibtex

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub,Thorsten Zweipfennig,Gerrit Luekens,Hannes Behmenburg,Dirk Fahle,Martin Eickelkamp,Michael Heuken,Holger Kalisch,Andrei Vescan

IEEE Transactions on Electron Devices（2018）

Cited33Views0EIWOSBibtex

Self-Aligned Process for Selectively Etched P-Gan-gated AlGaN/GaN-on-Si HFETs

Gerrit Luekens,Herwig Hahn,Holger Kalisch,Andrei Vescan

IEEE Transactions on Electron Devices（2018）

Cited47Views0EIWOSBibtex

Index-Antiguiding in Narrow-Ridge Gan-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation

Luca Redaelli,Hans Wenzel,Joachim Piprek,Thomas Weig,Sven Einfeldt,Martin Martens,Gerrit Luekens,Ulrich T. Schwarz,Michael Kneissl

IEEE JOURNAL OF QUANTUM ELECTRONICS（2015）

Cited5Views0EIWOSBibtex

Gallium Nitride Laser Diodes with Integrated Absorber: on the Dynamics of Self‐pulsation

Katarzyna Holc,Gerrit Luekens,Thomas Weig,Klaus Koehler,Joachim Wagner,Ulrich T. Schwarz

Physica status solidi C, Conferences and critical reviews/Physica status solidi C, Current topics in...（2014）

Cited7Views0Bibtex

Energy and Wide Bandgap

Security Law, CJ Roberts,Sandeep Inampudi,W. Streyer, Andrew A. Rosenberg,Viktor A. Podolskiy,Daniel Wasserman,Alan Teran,Matt DeJarld, Jinwoo Hwang, Wei‐Yen Lim, Joeson Wong, David Blaauw, Ying Lee, J. Mirecki Millunchick,Jamie Phillips,Ramya Yeluri, James Lu, Duncan L. Browne,Christophe A. Hurni,Srabanti Chowdhury, S. Keller,James S. Speck, U. K. Mishra, Gaurav Gupta, Laurent Michel, Hao Li, Henk Snijders, Edwin Acuna, Zijian Li, Ruey-Shi Chu, Daniel Zehnder, Sadia Khalil, M Chen, Xiao Chen,K. S. Boutros,H. Hahn,B. Reuters, Simon Kotzea,Gerrit Lükens, Sascha Geipel,H. Kalisch, Anna Gan

openalex（2014）

Cited0Views0Bibtex

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