Geoffrey Yeap - Memory Solution Division, Taiwan Semiconductor Manufacturing Company Ltd

基本信息

Career Trajectory

Bio

Geoffrey Yeap (Senior Member, IEEE) received the BSEE, MSEE, and Ph.D. degrees in electrical and computer engineering with a specialization in microelectronics from The University of Texas at Austin, Austin, TX, USA, in 1986, 1988, and 1994, respectively. He was a Vice President of Engineering at Qualcomm Technologies Inc., in charge of silicon technology and foundry engineering (advanced digital CMOS, RF/analog, PMIC and bump/CPI) and foundry IP/design enablement. He has more than 25 years of semiconductor industry experience working at TSMC, Qualcomm, Motorola, and Advanced Micro Devices on advanced high-performance microprocessor and mobile silicon technology development, new technology/product introduction, as well as design/technology co-optimization. He is currently working at TSMC, Hsinchu, Taiwan, on the flagship advanced technology platform. He has authored more than 55 refereed journal/conference articles and holds more than 90 U.S. and international patents.

Research Interests

Papers共 78 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

A 38.1mb/mm2 SRAM in a 2Nm-Cmos-nanosheet Technology for High-Density and Energy-Efficient Compute

Tsung-Yung Jonathan Chang,Yen-Huei Chen, K. Venkateswara Reddy, Nikhil Puri, Teja Masina, Kuo-Cheng Lin,Po-Sheng Wang,Yangsyu Lin,Chih-Yu Lin, Yi-Hsin Nien,Hidehiro Fujiwara,Ku-Feng Lin,Ming-Hung Chang,Ching-Wei Wu,Robin Lee,Yih Wang,Hung-Jen Liao,Quincy Li,Ping-Wei Wang,Geoffrey Yeap

IEEE International Solid-State Circuits Conferencepp.492-494, (2025)

Cited0Views0EIWOSBibtex

Next Generation TSMC-SoIC® Platform for Ultra-High Bandwidth HPC Application

Yen-Ming Chen, T. Ko, K. C. Ting, S. K. Goel, A. Patidar, K. H. Tam, K. Huang, W. P. Changchien, W. Y. Wang, S.H. Huang, C. Y. Huang, C. H. Wang, W. Lai, Y. H. Lung, S. C. Lin, S. F. Yeh, C. W. Shih, T.J. Wu, Y. C. Lin, Y. H. Chen,H. J. Lin, M. S. Yeh, T. Y. Chen, H. Y. Pan, T. S. Lin, C.C. Hu, C. Bair,S. B. Jan, L.C. Hung, L. W. Wang,D. H. Chen, C. H. Yao, T. C. Huang, J. H. Shieh, W. C. Chiou,S. S. Lin,Frank Lee,Geoffrey Yeap, L.C. Lu,K. C. Hsu

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

Cited0Views0EIWOSBibtex

A 4.24-Ghz 128×256 SRAM Operating Double Pump Read Write Same Cycle in 5-Nm Technology

Nick Zhang, Young Suk Kim,Peter Hsu,Samsoo Kim,Derek Tao,Hung-Jen Liao,P. W. Wang,Geoffrey Yeap,Quincy Li,Tsung-Yung Jonathan Chang

IEEE Solid-State Circuits Letters (2024): 6-9

Cited3Views0EIWOSBibtex

2Nm Platform Technology Featuring Energy-Efficient Nanosheet Transistors and Interconnects Co-Optimized with 3DIC for AI, HPC and Mobile SoC Applications

Geoffrey Yeap,S.S. Lin, H.L. Shang, H.C. Lin, Y.C. Peng, M. Wang,PW Wang, CP Lin,KF Yu, WY Lee,HK Chen,DW Lin,BR Yang,CC Yeh, CT Chan, JM Kuo, C-M Liu, TH Chiu, MC Wen,T.L. Lee, CY Chang, R. Chen, P-H Huang,C.S. Hou, YK Lin, FK Yang, J. Wang, S. Fung, Ryan Chen, C.H. Lee,TL Lee, W. Chang, DY Lee, CY Ting, T. Chang, HC Huang,HJ Lin, C. Tseng, CW Chang,KB Huang,YC Lu, C-H Chen,C.O. Chui, KW Chen,MH Tsai, CC Chen, N. Wu,HT Chiang, XM Chen,SH Sun,JT Tzeng, K. Wang, YC Peng, HJ Liao, T. Chen,YK Cheng, J. Chang, K. Hsieh, A. Cheng, G. Liu, A. Chen,HT Lin, KC Chiang, CW Tsai, H. Wang, W. Sheu, J. Yeh, YM Chen, CK Lin, J. Wu, M. Cao, LS Juang, F. Lai, Y. Ku,S.M. Jang, L.C. Lu

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

Cited0Views0EIWOSBibtex

A 4.24ghz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology

Nick Zhang, Young Suk Kim,Peter Hsu,Samsoo Kim,Derek Tao,Hung-Jen Liao,Ping-Wei Wang,Geoffrey Yeap,Quincy Li,Tsung-Yung Jonathan Chang

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)

Cited0Views0EIWOSBibtex

A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application

J. C. Liu,S. Mukhopadhyay,Amit Kundu, S. H. Chen, H. C. Wang,D. S. Huang,J. H. Lee, M. Wang,Ryan Lu,S. S. Lin, Y. M. Chen, H. L. Shang,P. W. Wang,H. C. Lin,Geoffrey Yeap,Jun He

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

Cited22Views0EIWOSBibtex

Approaches to Area Efficient High-Performance Voltage-Controlled Oscillators in Nanoscale CMOS

Amit Jha,Pavan Yelleswarapu,Ken Liao,Geoffrey Yeap,K. O. Kenneth

IEEE Transactions on Microwave Theory and Techniques（2020）

Cited12Views0EIWOSBibtex

A 5-Nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V MIN Applications

Tsung-Yung Jonathan Chang,Yen-Huei Chen,Wei-Min Chan,Hank Cheng,Po-Sheng Wang,Yangsyu Lin,Hidehiro Fujiwara,Robin Lee,Hung-Jen Liao,Ping-Wei Wang,Geoffrey Yeap,Quincy Li

IEEE Journal of Solid-State Circuitsno. 1 (2020): 179-187

Cited60Views0EIWOSBibtex

15.1 A 5nm 135mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Jonathan Chang,Yen-Huei Chen,Gary Chan,Hank Cheng,Po-Sheng Wang,Yangsyu Lin,Hidehiro Fujiwara,Robin Lee,Hung-Jen Liao,Ping-Wei Wang,Geoffrey Yeap,Quincy Li

2020 IEEE International Solid- State Circuits Conference - (ISSCC)（2020）

Cited43Views0EIWOSBibtex

5Nm CMOS Production Technology Platform Featuring Full-Fledged EUV, and High Mobility Channel FinFETs with Densest 0.021µm2 SRAM Cells for Mobile SoC and High Performance Computing Applications

Geoffrey Yeap,S. S. Lin, Y. M. Chen, H. L. Shang,P. W. Wang, H. C. Lin,Y. C. Peng,J. Y. Sheu,M. Wang,X. Chen,B. R. Yang, C. P. Lin, F. C. Yang,Y. K. Leung,D. W. Lin, C. P. Chen,K. F. Yu,D. H. Chen, C. Y. Chang,H. K. Chen, P. Hung,C. S. Hou,Y. K. Cheng,J. Chang, L. Yuan,C. K. Lin,C. C. Chen,Y. C. Yeo,M. H. Tsai,H. T. Lin,C. O. Chui,K. B. Huang,W. Chang,H. J. Lin, K. W. Chen,R. Chen,S. H. Sun, Q. Fu, H. T. Yang,H. T. Chiang,C. C. Yeh,T. L. Lee,C. H. Wang,S. L. Shue, C. W. Wu,R. Lu,W. R. Lin,J. Wu, F. Lai, Y. H. Wu, B. Z. Tien,Y. C. Huang, L. C. Lu,Jun He, Y. Ku,J. Lin,M. Cao, T. S. Chang,S. M. Jang

2019 IEEE International Electron Devices Meeting (IEDM) (2019)

Cited159Views0EIWOSBibtex

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