Geoffrey Yeap - Memory Solution Division, Taiwan Semiconductor Manufacturing Company Ltd

基本信息

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职业迁徙

个人简介

Geoffrey Yeap (Senior Member, IEEE) received the BSEE, MSEE, and Ph.D. degrees in electrical and computer engineering with a specialization in microelectronics from The University of Texas at Austin, Austin, TX, USA, in 1986, 1988, and 1994, respectively. He was a Vice President of Engineering at Qualcomm Technologies Inc., in charge of silicon technology and foundry engineering (advanced digital CMOS, RF/analog, PMIC and bump/CPI) and foundry IP/design enablement. He has more than 25 years of semiconductor industry experience working at TSMC, Qualcomm, Motorola, and Advanced Micro Devices on advanced high-performance microprocessor and mobile silicon technology development, new technology/product introduction, as well as design/technology co-optimization. He is currently working at TSMC, Hsinchu, Taiwan, on the flagship advanced technology platform. He has authored more than 55 refereed journal/conference articles and holds more than 90 U.S. and international patents.

研究兴趣

论文共 78 篇作者统计合作学者相似作者

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A 38.1mb/mm2 SRAM in a 2Nm-Cmos-nanosheet Technology for High-Density and Energy-Efficient Compute

Tsung-Yung Jonathan Chang,Yen-Huei Chen, K. Venkateswara Reddy, Nikhil Puri, Teja Masina, Kuo-Cheng Lin,Po-Sheng Wang,Yangsyu Lin,Chih-Yu Lin, Yi-Hsin Nien,Hidehiro Fujiwara,Ku-Feng Lin,Ming-Hung Chang,Ching-Wei Wu,Robin Lee,Yih Wang,Hung-Jen Liao,Quincy Li,Ping-Wei Wang,Geoffrey Yeap

IEEE International Solid-State Circuits Conferencepp.492-494, (2025)

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Next Generation TSMC-SoIC® Platform for Ultra-High Bandwidth HPC Application

Yen-Ming Chen, T. Ko, K. C. Ting, S. K. Goel, A. Patidar, K. H. Tam, K. Huang, W. P. Changchien, W. Y. Wang, S.H. Huang, C. Y. Huang, C. H. Wang, W. Lai, Y. H. Lung, S. C. Lin, S. F. Yeh, C. W. Shih, T.J. Wu, Y. C. Lin, Y. H. Chen,H. J. Lin, M. S. Yeh, T. Y. Chen, H. Y. Pan, T. S. Lin, C.C. Hu, C. Bair,S. B. Jan, L.C. Hung, L. W. Wang,D. H. Chen, C. H. Yao, T. C. Huang, J. H. Shieh, W. C. Chiou,S. S. Lin,Frank Lee,Geoffrey Yeap, L.C. Lu,K. C. Hsu

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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A 4.24-Ghz 128×256 SRAM Operating Double Pump Read Write Same Cycle in 5-Nm Technology

Nick Zhang, Young Suk Kim,Peter Hsu,Samsoo Kim,Derek Tao,Hung-Jen Liao,P. W. Wang,Geoffrey Yeap,Quincy Li,Tsung-Yung Jonathan Chang

IEEE Solid-State Circuits Letters (2024): 6-9

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2Nm Platform Technology Featuring Energy-Efficient Nanosheet Transistors and Interconnects Co-Optimized with 3DIC for AI, HPC and Mobile SoC Applications

Geoffrey Yeap,S.S. Lin, H.L. Shang, H.C. Lin, Y.C. Peng, M. Wang,PW Wang, CP Lin,KF Yu, WY Lee,HK Chen,DW Lin,BR Yang,CC Yeh, CT Chan, JM Kuo, C-M Liu, TH Chiu, MC Wen,T.L. Lee, CY Chang, R. Chen, P-H Huang,C.S. Hou, YK Lin, FK Yang, J. Wang, S. Fung, Ryan Chen, C.H. Lee,TL Lee, W. Chang, DY Lee, CY Ting, T. Chang, HC Huang,HJ Lin, C. Tseng, CW Chang,KB Huang,YC Lu, C-H Chen,C.O. Chui, KW Chen,MH Tsai, CC Chen, N. Wu,HT Chiang, XM Chen,SH Sun,JT Tzeng, K. Wang, YC Peng, HJ Liao, T. Chen,YK Cheng, J. Chang, K. Hsieh, A. Cheng, G. Liu, A. Chen,HT Lin, KC Chiang, CW Tsai, H. Wang, W. Sheu, J. Yeh, YM Chen, CK Lin, J. Wu, M. Cao, LS Juang, F. Lai, Y. Ku,S.M. Jang, L.C. Lu

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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A 4.24ghz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology