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Research Interests

Papers共 41 篇Author StatisticsCo-AuthorSimilar Experts

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Trade-Off Between TID and SEGR Effects Based on High-Voltage Radiation-Hardened Gate Oxide
Yanfei Li,Ming Qiao,Rubin Xie,Genshen Hong,Bo Zhang
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.442-445, (2024)
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等离子清洗及点胶轨迹对底部填充胶流动性的影响
Zhai Peizhuo,Hong Genshen,Wang Yinquan,Li Shouwei, Chen Peng, Shao Wentao, Bai Xinxin
Semiconductor Technologyno. 3 (2023)
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Single event transient analysis of isolation problems for the high side devices in a 0.18μm BCD Process
Suzhen Wu,Genshen Hong,Rubin Xie, Qingdong Zhang, Haiming Xu, Zheng Xu
2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)pp.1-4, (2023)
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The Correlation of Total Dose Effect and Hot Carrier Injection for Radiation Hardened MOS
Rubin Xie,Ming Qiao,Xin Zhou, Chaoyang Ge, Sheng Xu,Genshen Hong
2022 10th International Symposium on Next-Generation Electronics (ISNE)pp.1-3, (2023)
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The Combined Effects of Cycling Endurance and TID on Floating Gate Memory Cells
Song Side,Guozhu Liu, He Qi, Gu Xiang,Hong Genshen, Wu Jianwei
Chinese Physics B (2021)
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