基本信息
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Career Trajectory
Bio
Gyoyoung Jin received the B.S., M.S., and Ph.D. degrees in electronics engineering from Seoul National University, Seoul, Korea, in 1985, 1987, and 1994, respectively.
He had a postdoctoral fellowship at Stanford University, Stanford, CA, from 1994 to 1997, where he worked in the research field of semiconductor device physics, modeling, and simulation methodology. In 1997, he joined ATD Teams, Semiconductor Research and Development Center, Memory Division, Samsung Electronics Company, Kyunggi-Do, Korea, where he has been engaged in developing DRAM process architecture and integration schemes for the shrink, high-speed, and low-power product.
Research Interests
Papers共 83 篇Author StatisticsCo-AuthorSimilar Experts
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2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.390-390, (2017)
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Seung Uk Han, Youngyoun Lee, Yongdoo Kim,Jemin Park,Junhee Lim,Satoru Yamada,Hyeongsun Hong,Kyupil Lee,Gyoyoung Jin,Eunseung Jung
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.394-394, (2017)
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2016 IEEE International Solid-State Circuits Conference (ISSCC)pp.314-315, (2016)
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Author Statistics
#Papers: 59
#Citation: 733
H-Index: 19
G-Index: 26
Sociability: 6
Diversity: 1
Activity: 0
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