Gaelle Beylier was born in France in 1981. She received the M.S. degree in material engineering and the Ph.D. degree in microelectronics in 2008 from the National Polytechnic Institute of Grenoble, Grenoble, France.
In 2009, she joined STMicroelectronics, Crolles, France, to work on the device reliability. Her research interests include MOS transistors, back-end dielectrics, imagers, and silicon photonic devices.